FDG328P applications ? load switch ? power management ? dc/dc converter features ? ?1.5 a, ?20 v. r ds(on) = 0.145 ? @ v gs = ?4.5 v r ds(on) = 0.210 ? @ v gs = ?2.5 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? compact industry standard sc70-6 surface mount package sc70-6 d d g d d s pin 1 6 5 4 1 2 3 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) ?1.5 a ? pulsed ?6 power dissipation for single operation (note 1a) 0.75 w p d (note 1b) 0.48 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient ( note 1b) 260 c/w package marking and ordering information device marking device reel size tape width quantity .28 FDG328P 7?? 8mm 3000 units product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?9 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?12 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.6 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?1.5 a v gs = ?2.5 v, i d = ?1.2 a v gs = ?4.5 v, i d = ?1.5 a, t j =125c 120 169 156 145 210 203 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?3 a g fs forward transconductance v ds = ?5 v, i d = ?1.5 a 5 s dynamic characteristics c iss input capacitance 337 pf c oss output capacitance 88 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 51 pf switching characteristics (note 2) t d(on) turn?on delay time 9 18 ns t r turn?on rise time 12 22 ns t d(off) turn?off delay time 10 20 ns t f turn?off fall time v dd = ?10 v, i d = 1 a, v gs = ?4.5 v, r gen = 6 ? 510ns q g total gate charge 3.7 6 nc q gs gate?source charge 0.7 nc q gd gate?drain charge v ds = ?10 v, i d = ?1.5 a, v gs = ?4.5 v 1.3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.62 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.62 a (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a.) 170/w when mounted on a 1 in 2 pad of 2 oz. copper. b.) 260/w when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDG328P product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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